Atomic arrangement at the 3C-SiC/Si(001) interface revealed utilising aberration-corrected transmission electron microscope

作者：Inamoto Shin^*; Yamasaki Jun; Tamaki Hirokazu; Tanaka Nobuo

来源：Philosophical Magazine Letters, 2011, 91(9): 632-639.

DOI：10.1080/09500839.2011.600730

• transmission electron microscopy
• aberration correction
• silicon carbide
• silicon
• interface structures
• misfit dislocations

The atomistic structure of the 3C-SiC/Si(001) interface has been investigated using a combination of aberration-corrected transmission electron microscopy and a newly developed image processing method for eliminating artificial contrast. The structures having periods four times longer than those of the silicon lattice have been observed distinctly in images taken along both Si[110] and Si[100] directions. Contrary to theoretical models proposed previously, the interface of the three-dimensional structural model that we constructed on the basis of our experiments has a silicon-rich configuration. We have clarified that the strain field induced by the two-dimensional misfit between Si(001)-(4 x 4) and SiC(001)-(5 x 5) is relaxed by the two-dimensional network of misfit dislocations; simple edge dislocations with [100] and [010] directions and Lomer dislocations with [110] and [110] directions. The atomistic structures of the Lomer dislocations have been also clarified.

• 出版日期2011