科研之友
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摘要
This paper proposes the design of a dual-band readout circuit structure for infrared imaging systems. The design uses a capacitive transimpedance amplifier with a single-stage amplifier and a switch mode. It has the advantages of a simple structure and a small pixel area. Moreover, the switch mode provides the choice of different sensing modules. To verify the feasibility and applicability of the proposed design, a 10 x 8 experimental chip was designed and implemented using a TSMC 0.35 mu m 2P4M CMOS 5 V process. The experimental result shows a sensing photocurrent from 10 pA to 10 nA of a forward bias detector signal. A reverse-bias detector photocurrent is 12 pA to 10 nA. Total chip power consumption is less than 9.1 mW within the output buffer. Power-per-pixel is 2.2 mu W/pixel, and the pixel linearity is more than 99%. A description of the design and the latest experimental test results of this device are reported in this paper.
- 出版日期2013-9
