Aluminium-doped n-type ZnS nanowires as high-performance UV and humidity sensors

作者：Jiang, Peng; Jie, Jiansheng^*; Yu, Yongqiang; Wang, Zhi; Xie, Chao; Zhang, Xiwei; Wu, Chunyan; Wang, Li; Zhu, Zhifeng; Luo, Linbao

来源：Journal of Materials Chemistry, 2012, 22(14): 6856-6861.

DOI：10.1039/c2jm15365c

• Aluminium doped
• Electrical transport properties
• Electron concentration
• Field effect transistor (FETs)
• High sensitivity
• Orders of magnitude
• Resistance variations
• Thermal co-evaporation

Controlling the electrical transport properties of II-VI nanostructures is vital to their practical applications. Here, we report the synthesis of n-type ZnS nanowires (NWs) by using aluminium (Al) as a dopant via a simple thermal co-evaporation method. The conductivities of the ZnS:Al NWs were greatly enhanced upon Al doping and could be further tuned in a wide range of 3 orders of magnitude by adjusting the doping level. Field-effect transistors (FETs) fabricated from individual ZnS: Al NWs revealed an electron concentration up to 1.3 x 10(18) cm(-3) in the NWs. Significantly, the doped NWs showed great potential as visible-blind UV sensors with an extremely high responsivity of 4.7 x 10(6) A W-1, giving rise to a large gain-bandwidth (GB) of similar to 0.1 GHz. The high sensitivity of the ZnS:Al NWs to humidity was also investigated; the devices displayed a resistance variation of about 2 orders of magnitude in the relative humidity (RH) range of 50-90%. Our results demonstrate that the n-type ZnS:Al NWs have important applications in nanoelectronic and nano-optoelectronic devices.

• 出版日期2012
• 单位苏州大学; 合肥工业大学