Noise in micro-bolometers with silicon-germanium thermo-sensing layer

作者：Kosarev A^*; Moreno M; Torres A; Rumyantsev S; Cosme I

来源：Thin Solid Films, 2010, 518(12): 3310-3312.

DOI：10.1016/j.tsf.2009.09.122

• Silicon-germanium films
• Plasma deposition
• Electrical properties and measurements
• Electronic devices

Low frequency noise in a-Si(x)Ge(y):H thermo-sensing films, on glass and in micro-bolometers of planar and sandwich structures based on the same material has been studied at different temperatures. The noise spectra had the form of the 1/f-like noise with the frequency exponent within the range of 0.8 to 1.6 depending on the sample and temperature. In the temperature range from T = 340 to 400 K the amplitude of the noise and current (at constant voltage) increased. These dependences can be described as a thermal activated process with energies of E(a)(S/I) = 0.63 eV and E(a)(film) = 0.34 eV for relative spectral noise density of the current fluctuations and DC current, respectively.

• 出版日期2010-4-2