Microcontact Printed RuOx Film as an Activation Layer for Selective-Area Atomic Layer Deposition of Ruthenium

作者：Farm Elina^*; Lindroos Seppo; Ritala Mikko; Leskela Markku

来源：Chemistry of Materials, 2012, 24(2): 275-278.

DOI：10.1021/cm202468s

• selective-area atomic layer deposition
• atomic layer deposition
• ruthenium

Selective-area atomic layer deposition (ALD) was achieved using microcontact printed RuOx films as an activation layer for ruthenium ALD process. Patterned RuOx films were prepared by transferring RuCl3 layer by a PDMS (polydimethylsiloxane) stamp to Si(100) substrate and exposing this layer to ozone. Patterned films had either 1.5 mu m or about 500 nm wide RuOx lines. Ruthenium was deposited on the activated areas at 250 degrees C. At this temperature the ruthenium did grow only on the activated areas but not on silicon so that the features of the stamps were repeated on the substrate.

• 出版日期2012-1-24