科研之友
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摘要
Highly uniform step and termination structures on 4H- and 6H-SiC(0001) surfaces have been prepared via moderate annealing in disilane. Atomic force microscopy and dark-field low-energy electron microscopy imaging indicate single-phase terminations separated solely by half-unit-cell-height steps, driven by stacking fault energy. The atomic structure of 4H-SiC(0001)-root 3 x root 3R30 degrees-Si has been determined quantitatively by nanospot low-energy electron diffraction. The topmost stacking fault at the 4H surface has been found to be between the second and third bilayers.
- 出版日期2011-8
- 单位IBM
