摘要

This letter reports a novel vector hydrophone based on the piezoresistive effect of resonant tunneling diode (RTD). An external pressure introduces stress in the layers of RTD and induces its current-voltage (I-V) curves change. This effect has been applied to designing new sensor. By control-hole technology, the sensor is processed integrated with GaAs/InxGa1-xAs/AlAs double barrier structures posited on its strain-sensitive region. The fabricated sensor is packaged for watertight solution, and underwater measurements are conducted in RTD's negative differential resistance (NDR) region. Directivity curve of the sensor follows "8" cosine functional form, which shows its vector sound signal detection ability, and its sensitivity reaches -184.6 dB (0 dB = 1 V/mu Pa) at 1 KHz.