Mechanism of Current Flow in a Au-Ti-Al-Ti-n(+)-GaN Ohmic Contact in the Temperature Range of 4.2-300 K

作者：Sachenko A V^*; Belyaev A E; Boltovets N S; Konakova R V; Kapitanchuk L M; Sheremet V N; Sveshnikov Yu N; Pilipchuk A S

来源：Semiconductors, 2014, 48(10): 1308-1311.

DOI：10.1134/S106378261410025X

The temperature dependence of the contact resistivity rho(c)(T) of Au-Ti-Al-Ti-n(+)-GaN ohmic contacts is studied experimentally and substantiated theoretically in the temperature range T = 4.2-300 K.

• 出版日期2014-10