科研之友
微信
新浪微博
Facebook
分享链接
摘要
Thin films of zirconium oxide were deposited on Si (100) substrates by reactive radio frequency magnetron sputtering. The films were characterized by high-resolution transmission electron microscope (HRTEM) and atomic force microscope (AFM) to investigate the variation of surface morphology and microstructure with oxygen partial pressures and deposition temperatures, respectively. With the increase in oxygen partial pressure ratio from 7% to 100%, the surface roughness approximatively linearly increases, and the phase transition of the films is a-ZrO2 (amorphous)-> a-ZrO2 with a little m-ZrO2 (monoclinic) -> m-ZrO2+t-ZrO2 (tetragonal)-> m-ZrO2. For deposition temperatures ranging from room temperature to 550 degrees C, the phase transition of the films is a-ZrO2 (below 250 degrees C)-> m-ZrO2 with a little a-ZrO2 (450 degrees C)-> m-ZrO2 With a little t-ZrO2 (550 degrees C). According to the results on the structure and surface morphology of ZrO2 thin films, the dependence of deposition temperature on surface evolution and its physical mechanism are discussed also.
