Compact Modeling of Flicker Noise in HEMTs

作者：Dasgupta Avirup; Khandelwal Sourabh; Chauhan Yogesh Singh^*

来源：IEEE Journal of the Electron Devices Society, 2014, 2(6): 174-178.

DOI：10.1109/JEDS.2014.2347991

• HEMT
• flicker noise
• noise model

In this paper, we present a physics-based compact model for low frequency noise in high electron mobility transistors (HEMTs). The model is derived considering the physical mechanisms of carrier number fluctuation and mobility fluctuation in the channel. The model is tunable and hence applicable to a wide range of HEMT devices of different geometries and construction. The model is in excellent agreement with experimental data and TCAD simulations.

• 出版日期2014-11