Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory

作者：Chu, Tian-Jian; Tsai, Tsung-Ming^*; Chang, Ting-Chang; Chang, Kuan-Chang; Pan, Chih-Hung; Chen, Kai-Huang; Chen, Jung-Hui; Chen, Hsin-Lu; Huang, Hui-Chun; Shih, Chih-Cheng; Syu, Yong-En; Zheng, Jin-Cheng; Sze, Simon M.

来源：Applied Physics Letters, 2014, 105(22): 223514.

DOI：10.1063/1.4902503

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This study presents the dual bipolar resistive switching characteristics induced by oxygen-ion accumulation. By introducing nitrogen to the interface between the resistive switching region and active switching electrode, filament-type and interface-type resistive switching behaviors can both exist under different operation conditions. This particular oxygen-ion accumulation-induced switching behavior suggests an extraordinary potential for resistive random access memory applications because the operating power can be significantly decreased (about 100 times). The physical mechanism of this oxygen-ion accumulation-induced interface-type resistive switching behavior is explained by our model and clarified by current conduction mechanism and material analysis.

• 出版日期2014-12-1
• 单位厦门大学; 中山大学