摘要

An accurate and broad-band method for heterojuction bipolar transistors(HBT) small-signal model parameters is presented in this paper. This method differs from previous ones by extracting the equivalent-circuit parameters without using special test structure or global numerical optimization techniques. The main advantage of this method is that a unique and physically meaningful set of intrinsic parameters is extracted from impedance and admittance representation of the measured S-parameters in the frequency range of 0.5-12GHz under different bias conditions. An equivalent circuit for the HBT under a forward-bias condition is proposed for extraction of access resistance and parasitic inductance. The method yields a deviation of less then 5% between measured and modeled S-parameters.