Direct LED writing of submicron resist patterns: Towards the fabrication of individually-addressable InGaN submicron stripe-shaped LED arrays

作者：Gong Zheng^*; Guilhabert Benoit; Chen Zhitao; Dawson Martin D

来源：Nano Research, 2014, 7(12): 1849-1860.

DOI：10.1007/s12274-014-0545-5

• direct writing
• light-emitting diodes
• electroluminescence
• efficiency droop
• mask-free lithography

Submicron stripe-shaped InGaN light-emitting diode (LED) arrays with individually addressable capabilities are demonstrated. The critical submicron-stripe metallic electrodes, which define the emission pattern, are formed by direct LED writing in a mask-free manner. The individually addressable submicron-stripe LEDs show excellent performance in terms of their electrical characteristics (with typical turn-on voltage of 3 V, operational stability and power output up to 28 mu W at 3 mA). Unlike conventional broad-sized LEDs, the efficiency droop of the submicron-stripe LED is significantly suppressed-in fact, there is no efficiency droop for current densities up to 100 A/cm(2). Furthermore, the submicron-stripe LED shows a lower temperature-dependent shift of the emission wavelength. The lateral emission width is increased with increasing injection current, resulting in a wider lateral emission size than the metallic submicron-stripe electrode. The underlying physics of these phenomena are analysed. Such submicron-stripe LED arrays open up promising applications in nanophotonics and bio-sensing.

• 出版日期2014-12