Al2O3-Dielectric In0.18Al0.82N/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With Backside Substrate Metal-Trench Structure

作者：Lee Ching Sung^*; Hsu Wei Chou; Liu Han Yin; Chen Yu Chang

来源：IEEE Journal of the Electron Devices Society, 2018, 6(1): 68-73.

DOI：10.1109/JEDS.2017.2769115

• InAlN/AlN/GaN
• MOS-HFET
• Al2O3
• non-vacuum ultrasonic spray pyrolysis deposition
• backside metal-trench

This paper investigates novel Al2O3-dielectric In0.18Al0.82N/AlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with backside metal-trench structure grown by using a non-vacuum ultrasonic spray pyrolysis deposition technique. 3-mu m deep metal trenches coated with 150-nm thick Ni were formed on the backside of the Si substrate to improve the heat dissipation efficiency. The present In0.18Al0.82N/AlN/GaN MOS-HFET (Schottky-gate HFET) has demonstrated improved maximum drain-source current density (I-DS, (max)) of 1.08 (0.86) A/mm at V-DS = 8 V, gate-voltage swing of 4 (2) V, on/off-current ratio (I-on/I-off) of 8.9 x 10(8) (7.4 x 10(4)), subthreshold swing of 140 (244) mV/dec, two-terminal off-state gate-drain breakdown voltage (BVGD) of -191.1 (-173.8) V, turn-on voltage (V-on) of 4.2 (1.2) V, and three-terminal on-state drain-source breakdown voltage (BVDS) of 155.9 (98.5) V. Enhanced power performances, including saturated output power (P-out) of 27.9 (21.5) dBm, power gain (G(a)) of 20.3 (15.5) dB, and power-added efficiency (PAE) of 44.3% (34.8%), are achieved.

• 出版日期2018-12