Automated characterization of bending and expansion of a lattice of a Si substrate near a SiGe/Si interface by using split HOLZ line patterns

作者：Saitoh Koh^*; Yasuda Yoshifumi; Hamabe Maiko; Tanaka Nobuo

来源：Journal of Electron Microscopy, 2010, 59(5): 367-378.

DOI：10.1093/jmicro/dfq016

• convergent-beam electron diffraction
• lattice parameter determination
• lattice bending strain
• strained silicon

A method to determine lattice parameters and parameters characterizing the bending strain of the lattice, the direction and magnitude of the displacement field of the bending strain, by using higher-order Laue zone (HOLZ) reflection lines observed in convergent-beam electron diffraction patterns is proposed. In this method, all of the parameters are simultaneously determined by a fit of two Hough transforms of experimental and kinematically simulated HOLZ line patterns. This method has been used to obtain two-dimensional maps of lattice parameter a, the direction and relative magnitude of the displacement field in a Si substrate near a SiGe/Si interface.

• 出版日期2010-10