Nonvolatile resistive memory of ferrocene covalently bonded to reduced graphene oxide

作者:Jin Changhua; Lee Junghyun; Lee Eunkyo; Hwang Eunhee; Lee Hyoyoung*
来源:Chemical communications, 2012, 48(35): 4235-4237.
DOI:10.1039/c2cc30973d

摘要

Recently, the number of studies concerning organic memory devices has grown rapidly due to increase in the demand for electronic devices. Among the organic memory devices, the development of organic nonvolatile memory materials and devices is becoming an important research topic due to their low power consumption.

  • 出版日期2012