摘要
Newly designed scintillator of (0001)-oriented ZnO vertical nanowires (vnws) for X-ray imaging was prepared on a Ga-doped ZnO/soda-lime glass by electrodeposition, and the light emission feature was estimated in a synchrotron radiation facility. The ZnO-vnws scintillator revealed a strong light emission and improved resolution on CMOS image compared with that for the ZnO-layer scintillator, although the light emission performance was deteriorated in comparison to the Lu3Al5O12:Ce3+. The light emission property closely related to the nanostructure and the resultant photoluminescence characteristic.
- 出版日期2015-2-23