Unipolar TaOx-Based Resistive Change Memory Realized With Electrode Engineering

作者：Zhang Lijie^*; Huang Ru; Zhu Minghao; Qin Shiqiang; Kuang Yongbian; Gao Dejin; Shi Congyin; Wang Yangyuan

来源：IEEE Electron Device Letters, 2010, 31(9): 966-968.

DOI：10.1109/LED.2010.2052091

• Gibbs free energy
• RRAM
• TaOx
• unipolar

In this letter, a reproducible unipolar resistive change memory (RRAM) based on TaOx was successfully fabricated through electrode design. The fabricated unipolar RRAM exhibits lower switching voltages, fast switching speed of less than 80 ns, excellent retention capabilities, and stable cycling behaviors. Moreover, the role of top-electrode material on the resistive switching mode polarity of TaOx-based RRAM was verified by comparative experiments. Analysis about the electrode effect on the resistive switching mode polarity of TaOx-based RRAM with the theory of Gibbs free energy may provide some guidelines for the design of unipolar metal-oxide-based RRAM.

• 出版日期2010-9
• 单位北京大学