High-performance logic transistor DC benchmarking toward 7 nm technology-node between III-V and Si tri-gate n-MOSFETs using virtual-source injection velocity model

作者：Baek Rock Hyun; Kim Jin Su; Kim Do Kywn; Kim Taewoo^*; Kim Dae Hyun

来源：Solid-State Electronics, 2016, 116: 100-103.

DOI：10.1016/j.sse.2015.11.031

• Virtual-Source
• Injection velocity
• ITRS
• Logic
• InGaAs

Injection velocity (v(inj)) is a unique figure-of-merit that determines logic transistor ON-current (ION) and switching delay (CV/I). This paper reports on Virtual-Source (VS) based analytical and physical model, which was calibrated by using state-of-the-art experimental data on III-V and Si tri-gate n-MOSFET, aiming to compare High-Performance (HP) logic transistor performance at 7 nm technology-node. We find that a significant increase in the virtual source injection velocity and improvement in the electrostatic integrity are critical, to meet the projected I-ON/I-OFF ratio for the 7 nm technology node.

• 出版日期2016-2