Bond lengths and lattice structure of InP0.52Sb0.48 grown on GaAs

作者：Wu Chen Jun^*; Feng Zhe Chuan; Chang Wen Ming; Yang Chih Chung; Lin Hao Hsiung

来源：Applied Physics Letters, 2012, 101(9): 091902.

DOI：10.1063/1.4748295

• Distortion energy
• End points
• Extended X-ray absorption fine structure measurements
• Lattice structures
• Reciprocal space mapping
• Residual strains
• Super cell
• Valence-force field model

We performed reciprocal space mapping (RSM) and extended x-ray absorption fine structure (EXAFS) measurements to investigate the lattice structure of InP0.52Sb0.48 grown on GaAs. The RSM data reveal the existence of residual strain in the 1-mu m-thick epilayer. The average vertical to horizontal lattice constant ratio, a(z)/a(xy), is 1.009. We used a valence force field model to calculate the distortion energy and bond lengths of InPSb supercells with different a(z)/a(xy) ratio. The calculated InP and InSb bond lengths are in good agreement with the results of EXAFS. Both bond lengths are close to those in corresponding end-point binaries. We attributed the residual strain to the non-vanishing distortion energy resulting from the bond length mismatch between InP and InSb bonds.

• 出版日期2012-8-27
• 单位中国科学院电工研究所