A cobalt layer deposition study: Dicobaltatetrahedranes as convenient MOCVD precursor systems

作者：Georgi C; Hildebrandt A; Waechtler T; Schulz S E; Gessner T; Lang H^*

来源：Journal of Materials Chemistry C, 2014, 2(23): 4676-4682.

DOI：10.1039/c4tc00288a

Low melting or liquid cobalt(0) MOCVD precursors of type [Co-2(CO)(6)(eta(2)-RC CR')] (R - H, R' - (CH3)(3)Si, (C4H9)-C-n, (C5H11)-C-n, (C6H13)-C-n, (C7H15)-C-n; R = (C3H7)-C-n, R' = (CH3)(3)Si, CH3; R = R' = C2H5, (CH3)(3)Si) have been prepared by the reaction of the appropriate alkynes with Co-2(CO)(8). Variation of the substituents at the C, C triple bond allowed the study of their influence on the thermal behaviour and vapour pressure. These measurements showed that the cobalt(0) precursors are suitable for application within the MOCVD (Metal-Organic Chemical Vapour Deposition) process. Decomposing deposition of the cobalt precursors was realized in a home-built vertical cold-wall CVD reactor under mild conditions without any addition of co-reactants. The obtained dense and conformal cobalt layers have been characterized by SEM, EDX and XPS measurements. Depending on the precursor applied, pure cobalt films (96.7% Co) or mixtures of cobalt, carbon and cobalt oxide with varying composition with layer thicknesses of 35-90 nm were formed.

• 出版日期2014