科研之友
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摘要
Relations between the band gaps of nitride alloys and their lattice parameters are presented and limits to tuning of the fundamental gap in nitride semiconductors are set by combining a large number of experimental data with ab initio theoretical calculations. Large band gap bowings obtained theoretically for Ga(x)Al(1-x)N, In(x)Ga(1-x)N, and In(x)Al(1-x)N for uniform as well as clustered arrangements of the cation atoms are considered in the theoretical analysis. It is shown that indium plays a particular role in nitride alloys being responsible for most of the observed effects.
- 出版日期2010-3-8
