摘要

A novel planar vertical double-diffused metal-oxide-semiconductor (VDMOS) structure with an ultra-low specific on-resistance (R-on,R- sp), whose distinctive feature is the use of inhomogeneous floating p-islands in the n-drift region, is proposed. The theoretical limit of its R-on,R- sp is deduced, the influence of structure parameters on the breakdown voltage (BV) and R-on,R- sp are investigated, and the optimized results with BV of 83 V and R-on,R- sp of 54 m Omega.mm(2) are obtained. Simulations show that the inhomogeneous-floating-islands metal-oxide-semiconductor field-effect transistor (MOSFET) has a superior "R-on,R- sp/BV" trade-off to the conventional VDMOS (a 38% reduction of R-on,R- sp with the same BV) and the homogeneous-floating-islands MOSFET (a 10% reduction of R-on,R- sp with the same BV). The inhomogeneous-floating-islands MOSFET also has a much better body-diode characteristic than the superjunction MOSFET. Its reverse recovery peak current, reverse recovery time and reverse recovery charge are about 50, 80 and 40% of those of the superjunction MOSFET, respectively.

  • 出版日期2011-12
  • 单位电子薄膜与集成器件国家重点实验室; 电子科技大学