Analysis of surface states in ZnO nanowire field effect transistors

作者：Shao Ye; Yoon Jongwon; Kim Hyeongnam; Lee Takhee; Lu Wu^*

来源：Applied Surface Science, 2014, 301: 2-8.

DOI：10.1016/j.apsusc.2014.02.137

• ZnO NW
• Surface states
• Field effect transistors
• Device modeling

Nanowires (NWs) have attracted considerable interests for scaled electronic and optoelectronic device applications. However, NW based semiconductor devices normally suffer from surface states due to the existence of dangling bonds or surface reconstruction. Because of their large surface-to-volume ratio, surface states in NWs can easily affect the metallic contacts to NWs and electron transport in NW. Here, we present ZnO NW surface analysis by performing current-voltage characterization on ZnO NW Schottky barrier field effect transistors with different metal contacts (Ti, Al, Au) at both room temperature and cryogenic temperature. Our results show that three metal contacts are all Schottky contacts to ZnO NWs due to surface states. Our further study reveals: (a) the surface states related Schottky barrier height (SBH) can be extracted from a back to back Schottky diodes model and the SBH values are in the range of 0.34-0.37 eV for three metal contacts; (b) the trap activation energy determined from the Arrhenius plots of different Schottky metal contacts is in the range of 0.23-0.29 eV, which is oxygen v

• 出版日期2014-5-15