A UVLO Circuit in SiC Compatible With Power MOSFET Integration

作者：Glover Michael D^*; Shepherd Paul; Francis A Matt; Mudholkar Mihir; Mantooth Homer Alan; Ericson Milton Nance; Frank S Shane; Britton Charles L; Marlino Laura D; McNutt Ty R; Barkley Adam; Whitaker Bret; Lostetter Alexander B

来源：IEEE Journal of Emerging and Selected Topics in Power Electronics, 2014, 2(3): 425-433.

DOI：10.1109/JESTPE.2014.2313119

• MOSFET circuits
• power MOSFET
• silicon carbide (SiC)
• temperature

The design and test of the first undervoltage lock-out circuit implemented in a low-voltage 4H silicon carbide process capable of single-chip integration with power MOSFETs is presented. The lock-out circuit, a block of the protection circuitry of a single-chip gate driver topology designed for use in a plug-in hybrid vehicle charger, was demonstrated to have rise/fall times compatible with a MOSFET switching speed of 250 kHz while operating over the targeted operating temperature range between 0 degrees C and 200 degrees C. Captured data show the circuit to be functional over a temperature range from -55 degrees C to 300 degrees C. The design of the circuit and test results is presented.

• 出版日期2014-9