科研之友
微信
新浪微博
Facebook
分享链接
摘要
A model for the transformation of SiC polytypes occurring during the growth of an epitaxial layer is suggested that is based on the variation over time of the concentration of carbon vacancies in a transition layer. Experimental data are analyzed in terms of this model. It is shown that the parameter eta = G tau/L-T (LT is the thickness of the transition layer, G is the film growth rate, and tau is the lifetime of a vacancy in the transition layer) is invariant with respect to the method and temperature of the growth of the epitaxial layer. This parameter is determined only by the concentration of carbon vacancies in the substrate and in the film.
- 出版日期2005-3
