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摘要
The authors demonstrate the generation of ultrabroadband stimulated emission in the quasi-zero-dimensional InAs/InAlGaAs quantum-dash laser grown on InP substrate. The laser exhibits lasing wavelength coverage of up to 76 nm at similar to 1.64 mu m from simultaneous multiple confined states lasing at room temperature. Unlike the conventional interband diode laser, the rule changing broadband lasing signature is achieved from the quasicontinuous interband transition formed by the inhomogeneous quantum-dash nanostructure.
- 出版日期2007-9-10
