Manipulation of electrical properties in CVD-grown twisted bilayer graphene induced by dissociative hydrogen adsorption

作者：Hong Sung Ju; Park Min; Kang Hojin; Lee Minwoo; Soler Delgado David; Jeong Dae Hong; Park Yung Woo; Kim Byung Hoon

来源：Current Applied Physics, 2016, 16(12): 1637-1641.

DOI：10.1016/j.cap.2016.09.019

• Hydrogenation
• Twisted bilayer graphene
• First-order adsorption
• Electron doping
• Band-gap opening

We report hydrogen adsorption on twisted bilayer graphene (tBLG). Raman spectroscopy and the electrical transport properties (electrical resistance and thermoelectric power) confirm the electron doping by hydrogen adsorption, in agreement with the previous report involving exfoliated bilayer graphene (BLG). Common electron doping behaviors were observed at various twist angles (0 degrees, 5 degrees, 12.5 degrees, and 30 degrees), and the adsorptions follow the first-order Langmuir-type adsorption model. Specifically, we analyzed the off-state currents, with band-gap openings of around 13 meV in tBLG with twist angle of 0 degrees, as in Bernal-stacked BLG.

• 出版日期2016-12