Analysis and design of class E power amplifier considering MOSFET parasitic input and output capacitances

作者：Hayati Mohsen^*; Roshani Sobhan; Kazimierczuk Marian K; Sekiya Hiroo

来源：IET Circuits Devices & Systems, 2016, 10(5): 433-440.

DOI：10.1049/iet-cds.2015.0271

• MOSFET
• power amplifiers
• zero voltage switching
• class-E power amplifier design
• MOSFET parasitic input capacitance
• MOSFET parasitic output capacitance
• class-E PA
• metal oxide semiconductor field effect transistor
• nonlinear drain-to-source MOSFET parasitic capacitance
• linear gate-to-drain MOSFET parasitic capacitance
• linear gate-to-source MOSFET parasitic capacitance
• zero-voltage switching condition
• zero-derivative switching condition
• input series resistance
• circuit simulation

In this study, design theory and analysis for the class E power amplifier (PA), considering the metal oxide semiconductor field effect transistor (MOSFET) parasitic input and output capacitances, are proposed. The input resistance and capacitances cause non-ideal input voltage at gate terminal, which affect the specifications of the class E PA. In the proposed study, non-linear drain-to-source, linear gate-to-drain and linear gate-to-source MOSFET parasitic capacitances are considered, while zero voltage and zero derivative switching conditions are achieved. Moreover, the input resistance and the value of the input voltage are taken into account in the design theory. According to the obtained results, the duty cycle of the MOSFET depends on the MOSFET threshold voltage, input voltage, input series resistance, and some other parameters, which will be explained in this study. A design example is finally given to describe the design procedure at 1 MHz operating frequency along with the experimental result. The circuit simulation is also performed using PSpice software. The measured results showed quantitative agreements with simulation and theory results.

• 出版日期2016-9