Driving intervalley scattering and impact ionization in InAs with intense terahertz pulses

作者：Ho I Chen^*; Zhang X C

来源：Applied Physics Letters, 2011, 98(24): 241908.

DOI：10.1063/1.3600791

We report intense terahertz (THz) pulses inducing intervalley scattering and impact ionization mechanisms in doped InAs crystals by THz pump-THz probe measurements. Two competing mechanisms are observed by varying the impurity doping type of the semiconductors and the strength of the THz field. For p-doped InAs, a cascaded carrier generation dominates while for n-doped InAs, both mechanisms have to be considered. Electron fractional occupancy between the Gamma and L valleys is estimated at different field strengths.

• 出版日期2011-6-13