Nanocrystallization and interfacial tension of sol-gel derived memory

作者：Wu Chi Chang^*; Tsai Yi Jen; Chu Min Ching; Yang Shao Ming; Ko Fu Hsiang; Liu Pin Lin; Yang Wen Luh; You Hsin Chiang

来源：Applied Physics Letters, 2008, 92(12): 123111.

DOI：10.1063/1.2904626

The formation of the nanocrystals (NCs) by using the sol-gel spin-coating method at various annealing temperatures had been studied. The film started to form the islands at 600 degrees C annealing, and finally transferred into NCs at 900 degrees C. A model was proposed to explain the transformation of thin film. The morphology of sol-gel thin film at 600 degrees C annealing was varied and had higher interfacial energy. The crystallized process at 900 degrees C annealing could minimize the energy. The retention for 900 degrees C annealed sample exhibited less than 30% charge loss after 10(6) s at 125 degrees C measurement.

• 出版日期2008-3-24