Achieving high brightness of silicon nanocrystal light-emitting device with a field-effect approach

作者：Chen Jia Rong^*; Wang Dong Chen; Hao Hong Chen; Lu Ming

来源：Applied Physics Letters, 2014, 104(6): 061105.

DOI：10.1063/1.4865207

We report a field-effect approach to enhance the electroluminescence (EL) from a model Si nanocrystal light-emitting device (Si-NC LED). The field effects are established within the carrier injection regions of the LEDs via introducing an i-type Si layer on the top of active layer and an Al2O3 layer between the active layer and the Si substrate. The fields are consistent in polarity with the forwardly biased electric field within the LEDs. One order of magnitude increases in the EL intensity from Si-NC LED are readily achieved after introducing the field effects.

• 出版日期2014-2-10
• 单位复旦大学