Molecular beam epitaxy growth and optical properties of single crystal Zn3N2 films

作者：Wu, Peng; Tiedje, T.^*; Alimohammadi, H.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Wang, Cong

来源：Semiconductor Science and Technology, 2016, 31(10): 10LT01.

DOI：10.1088/0268-1242/31/10/10LT01

• molecular beam epitaxy
• semiconductor
• optical properties
• zinc nitride

Single crystal Zn3N2 films with (100) orientation have been grown by plasma-assisted molecular beam epitaxy on MgO and A-plane sapphire substrates with in situ optical reflectance monitoring of the growth. The optical bandgap was found to be 1.25-1.28 eV and an electron Hall mobility as high as 395 cm(2) V-1 s(-1) was measured. The films were n-type with carrier concentrations in the 10(18) -10(19) cm(-3) range.

• 出版日期2016-10
• 单位北京航空航天大学