A novel theoretical model for broadband blue InGaN/GaN superluminescent light emitting diodes

作者：Milani N Moslehi; Mohadesi V; Asgari A^*

来源：Journal of Applied Physics, 2015, 117(5): 054502.

DOI：10.1063/1.4907207

A broadband superluminescent light emitting diode with In0.2Ga0.8N/GaN multiple quantum wells (MQWs) active region is investigated. The investigation is based on a theoretical model which includes the calculation of electronic states of the structure, rate equations, and the spectral radiation power. Two rate equations corresponding to MQW active region and separate confinement heterostructures layer are solved self-consistently with no-k selection wavelength dependent gain and quasi-Fermi level functions. Our results show that the superluminescence started in a current of similar to 120mA (similar to 7.5 kA/Cm-2) at 300 K. The range of peak emission wavelengths for different currents is 423-426 nm and the emission bandwidth is similar to 5 nm in the superluminescence regime. A maximum light output power of 7.59 mW is obtained at 600mA and the peak modal gain as a function of current indicates logarithmic behavior. Also, the comparison of our calculated results with published experimental data is shown to be in good agreement.

• 出版日期2015-2-7