Low-Stress CMOS-Compatible Silicon Carbide Surface-Micromachining Technology-Part I: Process Development and Characterization

作者：Nabki Frederic^*; Dusatko Tomas A; Vengallatore Srikar; El Gamal Mourad N

来源：Journal of Microelectromechanical Systems, 2011, 20(3): 720-729.

DOI：10.1109/JMEMS.2011.2111355

• Complementary metal-oxide-semiconductor (CMOS) compatible
• direct current (dc) sputtering
• low temperature
• microelectromechanical systems (MEMS)
• silicon carbide (SiC)
• stress control
• surface micromachining

A low-temperature (< 300 degrees C) low-stress microelectromechanical systems fabrication process based on a silicon carbide structural layer is presented. A partially conductive sintered target enables low-temperature dc sputtering of amorphous silicon carbide (SiC) at high deposition rates (75 nm/min). The low stress of the structural film allows for mechanically reliable structures to be fabricated, while the low-temperature deposition allows for pre-SiC metallization. The process is designed for low-cost film deposition and for complementary metal-oxide-semiconductor postintegration, stemming from chemical and thermal compatibility. Process flow, deposition, etching, and stress control are discussed, and a detailed process characterization is reported. [2010-0235]

• 出版日期2011-6