AZO Thin Film Transistor Performance Enhancement by Capping an Aluminum Layer

作者：Yu, Wen; Han, Dedong^*; Dong, Junchen; Cong, Yingying; Cui, Guodong; Wang, Yi; Zhang, Shengdong

来源：IEEE Transactions on Electron Devices, 2017, 64(5): 2228-2232.

DOI：10.1109/TED.2017.2679107

• Aluminum-zinc-oxide
• capping layer (CL)
• coplanar
• crystallization
• thin film transistor (TFT)

Coplanar bottom-gate aluminum-zinc-oxide (AZO) thin film transistors (TFTs) with aluminum (Al) capping layers were fabricated in this work. The influences of the Al capping layer thickness and the post-annealing condition on the performance of the AZO-TFTs were investigated. Results show that the performance of the AZO-TFTs are enhanced significantly by introducing the Al capping layer on back channel, with saturation mobility increasing dramatically from 0.128 to 12.6 cm(2)/V . s. The enhancement is ascribed to the diffusion of Al atoms into the AZO thin film and thus induced crystallization improvement.

• 出版日期2017-5
• 单位北京大学