Direct band Ge and Ge/InGaAs quantum wells in GaAs

作者：Aleshkin V Ya; Dubinov A A^*

来源：Journal of Applied Physics, 2011, 109(12): 123107.

DOI：10.1063/1.3594753

The possibility of the creation of direct band Ge and Ge/InGaAs quantum wells in GaAs is shown for small Ge quantum well thickness. Such quantum wells can emit efficiently the radiation in the 1.3-1.5 mu m wavelength range and can be used in laser diodes.

• 出版日期2011-6-15