Delayed Annealing Treatment for High-Quality CuSCN: Exploring Its Impact on Bifacial Semitransparent n-i-p Planar Perovskite Solar Cells

作者：Fan, Lin; Li, Yuelong; Yao, Xin; Ding, Yi; Zhao, Shanzhen; Shi, Biao; Wei, Changchun; Zhang, Dekun; Li, Baozhang; Wang, Guangcai; Zhao, Ying; Zhang, Xiaodan^*

来源：ACS Applied Energy Materials, 2018, 1(4): 1575-1584.

DOI：10.1021/acsaem.8b00001

• CuSCN hole-transporting material
• delayed annealing treatment
• interfacial contact
• n-i-p planar perovskite solar cell
• bifacial semitransparent n-i-p planar device
• low-temperature process

Inorganic p-type copper(I) thiocyanate (CuSCN) hole-transporting material (HTM) belongs to a promising class of compounds integral for the future commercialization of perovskite solar cells (PSCs). However, deposition of high-quality CuSCN films is a challenge for fabricating n-i-p planar PSCs. Here we demonstrate pinhole-free and ultrasmooth CuSCN films with high crystallinities and uniform coverage via delayed annealing treatment at 100 degrees C, which can effectively optimize the interfacial contact between the perovskite absorber and the electrode for efficient charge transport. A satisfactory efficiency of 13.31% is achieved from CuSCN-based n-i-p planar PSC. In addition, due to the superior transparency of p-type CuSCN HTMs, it is also possible to prepare bifacial semitransparent n-i-p planar PSCs, which eventually permits a maximum efficiency of 12.47% and 8.74% for the front and rear illumination, respectively. The low-temperature process developed in this work is also beneficial for those applications such as flexible and tandem solar cells on heat-sensitive substrates.

• 出版日期2018-4
• 单位吉林师范大学; 南开大学