A conduction model for polysilicon thin films over a wide doping level range

作者：Yan B^*; Li B; Yao R; Wu W

来源：The European Physical Journal - Applied Physics, 2012, 57(2): 20101.

DOI：10.1051/epjap/2011100306

• Comprehensive model
• Conduction Mechanism
• Conduction modeling
• Crystalline insulators
• Crystalline systems
• Effective diffusion
• Polysilicon thin films
• Thermionic field emission

In this paper, based on diffusion and thermionic-field emission conduction mechanisms in crystalline-insulator-crystalline system, a comprehensive model of current conduction for polycrystalline silicon is developed, considering the doping effect and the temperature effect on carrier mobility. The simulation results show a good agreement with the experimental data without unphysical fitting parameter. It is demonstrated that the effective diffusion velocity limits the carrier movement at light doping level, while the thermal velocity and the tunneling effect dominate the carrier conduction at heavy doping concentration. The developed model can interpret the conduction characteristics of polysilicon thin films over a wide range of doping levels with temperature.

• 出版日期2012-2
• 单位华南理工大学