Nanoscale Resistive Switching of a Copper-Carbon-Mixed Layer for Nonvolatile Memory Applications

作者：Choi Hyejung; Pyun Myeonobum; Kim Tae Wook; Hasan Musarrat; Dong Rui; Lee Joonmyoung; Park Ju Bong; Yoon Jaesik; Seong Dong jun; Lee Takhee; Hwang Hyunsang^*

来源：IEEE Electron Device Letters, 2009, 30(3): 302-304.

DOI：10.1109/LED.2008.2012273

• Cell array
• copper-carbon-mixed (Cu-C) layer
• resistance random access memory
• resistive switching

The nanoscale resistance switching property of copper-carbon-mixed (Cu-C) layer was investigated for nonvolatile memory applications. The Cu-C layer of the cross-point cell array showed typical filament switching with two orders of on/off ratio, exhibiting stable resistance switching and a narrow distribution of set and reset voltages in the nanoscale junction. In addition, we investigated the area dependence of operation current. Based on these results and current-voltage dependence on temperature, we discussed a potential switching mechanism of Cu-C layer.

• 出版日期2009-3