Device Delay in GaN Transistors Under High Drain Bias Conditions

作者：Lee Dong Seup^*; Laboutin Oleg; Cao Yu; Johnson Jerry Wayne; Beam Edward; Ketterson Andrew; Schuette Michael L; Saunier Paul; Palacios Tomas

来源：IEEE Electron Device Letters, 2013, 34(7): 849-851.

DOI：10.1109/LED.2013.2262034

• Drain delay
• GaN
• gate extension
• gate-to-source capacitance (C-gs)
• high electron mobility transistor (HEMT)
• short channel devices
• transconductance (g(m))

This letter studies the drain delay caused by the extension of the effective gate length in high-frequency GaN high electron mobility transistors. It is shown that the drain delay is mainly reflected in the gate-to-source capacitance (C-gs) of the device. The ratio of C-gs and transconductance (g(m)) is then used to accurately extract the drain delay and the result is compared with other extraction methods reported in the literature. Finally, we will use this new extraction technique to explain why short channel GaN devices show higher drain delay than longer channel transistors.

• 出版日期2013-7
• 单位MIT