Nanocrystalline-Silicon Thin-Film Nonvolatile Memory Devices for Display Applications

作者：Jung Sungwook^*; Yi Junsin

来源：IEEE Electron Device Letters, 2010, 31(9): 981-983.

DOI：10.1109/LED.2010.2053192

• Fowler-Nordheim (FN)
• nanocrystalline silicon (nc-Si)
• nonvolatile memory (NVM)
• oxynitride-nitride-oxide (OnNO)
• system-on-glass (SOG)

Nanocrystalline-silicon (nc-Si) nonvolatile memory (NVM) devices with oxynitride-nitride-oxide stack structures were fabricated with directly deposited nanocrystalline-silicon thin films using a low-temperature process. The fabricated bottom-gate nc-Si NVM devices have a wide memory window with a low operating voltage during programming and erasing due to an effective control of the gate dielectrics. In addition, after ten years, the memory device retains a memory window of over 67% between the programming and erasing states. These results demonstrate that these low-priced nc-Si NVM devices have a suitable programming and erasing efficiency for data storage under low-voltage conditions, in combination with excellent charge retention characteristics.

• 出版日期2010-9