MOVPE Growth of Thick Single Crystal CdZnTe Epitaxial Layers on Si Substrates for Nuclear Radiation Detector Development

作者：Niraula M^*; Yasuda K; Namba S; Kondo T; Muramatsu S; Wajima Y; Yamashita H; Agata Y

来源：IEEE Transactions on Nuclear Science, 2013, 60(4): 2859-2863.

DOI：10.1109/TNS.2013.2263841

• CdZnTe
• epitaxial layer
• heterojunction diode
• nuclear radiation detector
• Si substrate
• vapor-phase growth

Details about the MOVPE growth of thick single crystal CdZnTe layers on (211) Si substrates are presented. The growth was carried out at a substrate temperature of 650 degrees C, using dimethylcadmium, dimethylzinc, and diethyltellurium precursors. Control of Zn-concentration in the range from 0 to 0.2 was performed by controlling the precursors%26apos; flow-rates and ratio. Results from the XRD showed grown layers were single crystalline with no phase separation observed. The 4.2 K PL results show high intensity bound-exciton peaks which shifted to higher energies with increasing Zn-concentrations. A p-CdZnTe/p-CdTe/n-CdTe/n(+)-Si hetero-junction diode was fabricated and evaluated for its possible application in nuclear radiation detector development, which exhibited good rectification property.

• 出版日期2013-8