摘要

In this paper, we describe laser modification of polyethersulphone films treated with polarized KrF laser under ablation threshold of PES. By this procedure the polymer can be modified under mild conditions and with low laser fluencies. Creation of surface ordered structure was observed already after application of 8 mJ cm(-2). Optimal conditions for nanodots and ripples formation were determined. Mechanism of surface ordered structure formation is attributed to enhancement of laser intensity due to propagation of surface waves which interfere with incoming beam. The wettability measurement confirmed increasing trend of surface contact angle with laser fluence. The threshold of laser fluence for morphology collapse was identified to be 20 mJ cm(-2). The metal nanolayer of 100 nm consequently deposited of the surface pattern proved to copy and enhance the morphological properties (ripple and dot formation).

  • 出版日期2015-4-1