A Real-Time Thermal Model for Monitoring of Power Semiconductor Devices

作者：Gachovska, Tanya Kirilova^*; Tian, Bo; Hudgins, Jerry L.; Qiao, Wei; Donlon, John F.

来源：IEEE Transactions on Industry Applications, 2015, 51(4): 3361-3367.

DOI：10.1109/TIA.2015.2391438

• Insulated-gate bipolar transistor (IGBT)
• junction temperature
• resistance-capacitance (RC) thermal network
• temperature-dependent RC model

A resistance-capacitance (RC) thermal network with temperature-dependent thermal conductivities and heat capacitances is used to calculate the junction temperature of insulated-gate bipolar-transistor modules using a device model realized in Simulink. The collector current I-C, collector-emitter voltage V-CE, and the case temperature T-C measured during the cycling are used as input parameters of the proposed model. The proposed model is easier to implement compared with the thermosensitive electrical parameter (TSEP) method, and it is compared with an RC network with constant thermal conductivity and heat capacitance model and experimentally verified by using a TSEP method. The results of the proposed model show an improvement of the accuracy for determining the junction temperature compared with the model with constant thermal conductivity and heat capacitance.

• 出版日期2015-7