摘要

A wide locking range nMOS divide-by-2 RLC injection-locked frequency divider (ILFD) was designed and implemented in the TSMC 0.18-mu m BiCMOS process. The ILFD is based on a cross-coupled oscillator with one direct injection MOSFET and a RLC resonator. The RLC resonator is used to extend the locking range so that dual-band locking ranges can be merged in one locking range at both low and high injection powers. At the drain-source bias of 0.9V for switching transistors, and at the incident power of 0dBm the locking range of the divide-by-2 ILFD is 7.24GHz, from the incident frequency 2.65 to 9.89GHz, the locking range percentage is 115.47%. The power consumption of ILFD core is 8.685mW. The die area is 0.726x0.930mm(2).

  • 出版日期2016-12