Bose-Einstein statistics on power dissipation of CMOS circuits

作者：Qiang Wei^*; Cao Yang; Yan Yuanyuan; Gao Xun

来源：Chinese Journal of Electronics, 2007, 16(1): 54-58.

• CMOS circuits
• power dissipation
• quantum statistics

Excessive instantaneous power dissipation may reduce the reliability and performance of Very large scale integration (VLSI) chips. In order to synthesize circuits with high reliability, it is imperative to obtain a precise estimation of the distribution of instantaneous power dissipation. This paper makes a first attempt to illustrate the problem in a quantum statistics way. The distributions of instantaneous power dissipation of Complementary metal-oxide-semiconductor (CMOS) circuits under input vector pairs are investigated within the framework of equilibrium quantum gas. By mapping the set of input vector pairs and the corresponding instantaneous power dissipations to an equilibrium Bose gas, it is predicted that for CMOS circuit under input vector sets of definite size and average power dissipation, there exists a most probable distribution for instantaneous power dissipations, which follows Bose-Einstein statistics and can undergo Bose-Einstein condensation when the average power dissipation approaches zero. The results are confirmed by gate-level simulation of ISCAS-85 circuits.

• 出版日期2007-1
• 单位武汉大学