AlGaInP LEDs Prepared by Contact-Transferred and Mask-Embedded Lithography

作者：Lo H M^*; Hsieh Y T; Shei S C; Lee Y C; Zeng X F; Weng W Y; Lin N M; Chang S J

来源：IEEE Journal of Quantum Electronics, 2010, 46(12): 1834-1839.

DOI：10.1109/JQE.2010.2048742

• AlGaInP
• light-emitting diodes
• nanoimprint

The authors applied a simple, low-cost, mass-producible contact-transferred and mask-embedded lithography (CMEL) to texture p-GaP window layer for the fabrication of AlGaInP light-emitting diodes (LEDs) emitting at 612 nm. Under 20 mA current injection, it was found that forward voltages were 2.25, 2.39, 2.29, 2.39, 2.24, 2.21, and 2.25-V while the 20 mA output powers were 1.43, 1.42, 1.38, 1.35, 1.28, 1.22, and 1.16 mW for CMEL-400-nm LED, CMEL-600-nm LED, CMEL-800-nm LED, CMEL-1-mu m LED, CMEL-2-mu m LED, CMEL-3-mu m, and the conventional LED without CMEL, respectively.

• 出版日期2010-12