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摘要
The electron-hole pairing gap in a system of topological insulator (TI) ultra-thin film bilayer separated by a dielectric barrier is theoretically investigated beyond the mean-field approximation. We show that the pairing gap. is dramatically suppressed when accounting for the Coulomb correlation effect as well as the finite-thickness effect of the dielectric barrier. However,. can be increased by the coupling between the upper and lower surface states of each TI ultra-thin film. In order to observe much larger. in the present structure experimentally, the dielectric surrounding media materials with much lower dielectric constant, such as SiO2-based xerogel films, may be needed.
- 出版日期2015-6
- 单位北京应用物理与计算数学研究所
