摘要

A low power, high gain, and low-noise figure (NF) 5-6 GHz low-noise amplifier (LNA) with excellent reverse isolation in a cost effective 0.18 m CMOS technology is reported. To achieve sufficient power gain (S-21) and reverse isolation (S-12), the LNA comprises an inductive source-degeneration cascode stage followed by a cascode stage. The LNA consumes 7.99 mW, achieving high S-21 of 19 +/- 1.5 dB for frequencies of 5.1-6.2 GHz and excellent S-12 of -67.9 to -73.3 dB for frequencies of 5-6 GHz. In addition, the LNA achieves minimum NF of 2.8 dB at 5.5 GHz and NF of 2.91 +/- 0.11 dB for frequencies of 5-6 GHz, one of the best NF results ever reported for a 5-GHz-band CMOS LNA. To verify the 5-GHz LNA, a test IEEE 802.11 wireless local area network (WLAN) transceiver based on the LNA is also designed and implemented. The measured results show that for the 24 channels in 5-GHz band, the average sensitivity is -77 and 3 dBm better than that (-74 dBm) of the conventional one. A conventional one means the 802.11 WLAN controller in this work is replaced by a commercial RTL8812AR-VN WLAN controller. In addition, the average error vector magnitude of received IQ data is -32 dB (or 2.5%), 2.5 dB (or 0.8%) better than that (-29.5 dB [or 3.3%]) of the conventional one. The impressive results from this work indicate the high potential of the proposed LNA in 5-GHz WLAN applications.

  • 出版日期2015-2